Welcome to Future Semiconductor Device Lab!
There are pleasant members from diverse backgrounds
who have passion to science and competent professor
who can make the research reach new heights by supporting your talent.
Pushing the boundaries: an interview with Dae-Hyun Kim on terahertz devices
Wang Defu, National Science Review(NSR), 2024, Published, 11,
Performance Enhancement of AlGaN/GaN HEMT via Trap-State Improvement Using O2 Plasma Treatment
Walid Amir, Ju-Won Shin, Ki-Yong Shin, Surajit Chakraborty, Chu-Young Cho, Jae-Moo Kim, Sang-Tae Lee, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Dae-Hyun Kim and Tae-Woo Kim, IEEE Transactions on Electron Devices (TED), 2023, Published, 70, 2988 - 2993
Optimization of Channel Structures in InP HEMT Technology for Cryogenic Low-Noise and Low-Power Oper…
Eunjung Cha, Niklas Wadefalk, Giuseppe Moschetti, Arsalan Pourkabirian, Jörgen Stenarson, Junjie Li, Dae-Hyun Kim and Jan Grahn, IEEE Transactions on Electron Devices (TED), 2023, Published, 70, 2431 - 2436
